Far outside my expertise, but this could be a huge breakthrough. Ofc lots of practical details still need to be worked out. Trying to figure out who they copied this from - maybe the Romulan Empire? Qwen AI: Future Impact of the InSe Breakthrough 1. Next-Generation High-Speed Electronics Ultra-High Mobility (287 cm²/V·s): InSe transistors achieve mobility values far exceeding silicon (typically ~1,400 cm²/V·s for bulk silicon but lower in thin films). This could enable faster transistors for applications in radio-frequency (RF) communication, 6G networks, and high-performance computing. Sub-Boltzmann Subthreshold Swing (67 mV/decade): Near-ideal switching behavior reduces power consumption, making InSe ideal for energy-efficient logic circuits in IoT devices, mobile technology, and AI accelerators. 2. Scalable 2D Semiconductor Manufacturing The ability to produce 5-centimeter wafers with uniform crystallinity demonstrates scalability, addressing a critical barrier for industrial adoption of 2D materials. This could accelerate the transition from lab-scale prototypes to commercial devices, rivaling silicon’s dominance in integrated circuits. This breakthrough positions InSe as a leading candidate to redefine semiconductor performance, enabling faster, greener, and more versatile electronics. If industrial challenges are overcome, InSe-based devices could dominate future markets in AI, flexible electronics, and energy-efficient computing, marking a paradigm shift in materials science and technology.